advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v small package outline r ds(on) 117m surface mount device i d 2.5a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice 200805211 1 AP2304AGN-HF halogen-free product parameter rating drain-source voltage 30 gate-source voltage 20 continuous drain current 3 , v gs @ 10v 2.5 continuous drain current 3 , v gs @ 10v 2 pulsed drain current 1 10 total power dissipation 1.38 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for all commercial-industrial applications.
ap2304agn-h f electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2.5a - - 117 m , ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =2a, v gs =0v, - 24 - ns q rr reverse recovery charge di/dt=100a/s - 23 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270
ap2304agn-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 5.0v 4.0v v g =3.0v 0 2 4 6 8 10 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 6.0v 5.0v 4.0v v g =3.0v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =2.5a 0.01 0.10 1.00 10.00 0.1 0.5 0.9 1.3 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1.25 1.45 1.65 1.85 2.05 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 70 80 90 100 110 120 130 140 357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c
ap2304agn-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0123456 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2.5a v ds =24v v ds =20v v ds =15v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270 /w t t 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc
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